X-ray-induced electronic structure change in CuIr2S4

H. Gretarsson, Jungho Kim, D. Casa, T. Gog, K. R. Choi, S. W. Cheong, and Young-June Kim
Phys. Rev. B 84, 125135 – Published 29 September 2011

Abstract

The electronic structure of CuIr2S4 is investigated using various bulk-sensitive x-ray spectroscopic methods near the Ir L3 edge: resonant inelastic x-ray scattering (RIXS), x-ray absorption spectroscopy in the partial fluorescence yield mode, and resonant x-ray emission spectroscopy. A strong RIXS signal (0.75 eV) resulting from a charge-density-wave gap opening is observed below the metal-insulator transition temperature of 230 K. The resultant modification of electronic structure is consistent with the density functional theory prediction. In the spin- and charge-dimer disordered phase induced by x-ray irradiation below 50 K, we find that a broad peak around 0.4 eV appears in the RIXS spectrum.

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  • Received 29 April 2011

DOI:https://doi.org/10.1103/PhysRevB.84.125135

©2011 American Physical Society

Authors & Affiliations

H. Gretarsson1, Jungho Kim2, D. Casa2, T. Gog2, K. R. Choi3, S. W. Cheong3,4, and Young-June Kim1,*

  • 1Department of Physics, University of Toronto, 60 St. George Street, Toronto, Ontario M5S 1A7, Canada
  • 2CMC-XOR, Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA
  • 3l_PEM, Pohang University of Science and Technology, Pohang 790-784, Korea
  • 4R-CEM and Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA

  • *yjkim@physics.utoronto.ca

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Vol. 84, Iss. 12 — 15 September 2011

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