Multiphonon Raman scattering in graphene

Rahul Rao, Derek Tishler, Jyoti Katoch, and Masa Ishigami
Phys. Rev. B 84, 113406 – Published 12 September 2011

Abstract

We report on multiphonon Raman scattering in graphene samples. Higher-order combination modes involving three and four phonons are observed in single-layer, bilayer, and few-layer graphene samples prepared by mechanical exfoliation. The intensity of the higher-order phonon modes (relative to the G peak) is highest in single-layer graphene and decreases with increasing layers. In addition, all higher-order modes are observed to upshift in frequency almost linearly with increasing graphene layers, betraying the underlying interlayer van der Waals interactions.

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  • Received 17 June 2011

DOI:https://doi.org/10.1103/PhysRevB.84.113406

©2011 American Physical Society

Authors & Affiliations

Rahul Rao1,*, Derek Tishler2, Jyoti Katoch2, and Masa Ishigami2

  • 1Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, OH 43433, USA
  • 2Department of Physics and Nanoscience Technology Center, University of Central Florida, Orlando, FL 32816, USA

  • *rrao@honda-ri.com, present address: Honda Research Institute, 1381 Kinnear Rd., Columbus, OH.

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Issue

Vol. 84, Iss. 11 — 15 September 2011

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