Relaxation of optically excited carriers in graphene

Raseong Kim, Vasili Perebeinos, and Phaedon Avouris
Phys. Rev. B 84, 075449 – Published 10 August 2011

Abstract

We explore the relaxation of photoexcited graphene by solving a transient Boltzmann transport equation with electron-phonon (e-ph) and electron-electron (e-e) scattering. Simulations show that when the excited carriers are relaxed by e-ph scattering only, a population inversion can be achieved at energies determined by the photon energy. However, e-e scattering quickly thermalizes the carrier energy distributions washing out the negative optical conductivity peaks. The relaxation rates and carrier multiplication effects are presented as a function of photon energy, graphene doping, and dielectric constant.

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  • Received 2 June 2011

DOI:https://doi.org/10.1103/PhysRevB.84.075449

©2011 American Physical Society

Authors & Affiliations

Raseong Kim1, Vasili Perebeinos2, and Phaedon Avouris2

  • 1Network for Computational Nanotechnology, Purdue University, West Lafayette, Indiana 47907, USA
  • 2IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA

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Issue

Vol. 84, Iss. 7 — 15 August 2011

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