Effect of pressure on the magnetism of bilayer graphene

Eduardo V. Castro, María P. López-Sancho, and María A. H. Vozmediano
Phys. Rev. B 84, 075432 – Published 8 August 2011

Abstract

We study the effect of pressure on the localized magnetic moments induced by vacancies in bilayer graphene in the presence of topological defects breaking the bipartite nature of the lattice. By using a mean-field Hubbard model, we address the two inequivalent types of vacancies that appear in the Bernal stacking bilayer graphene. We find that by applying pressure in the direction perpendicular to the layers the critical value of the Hubbard interaction needed to polarize the system decreases. When combined with an external electric field applied perpendicularly to bilayer graphene the effect becomes sizable and can be detected experimentally. The effect is particularly enhanced for one type of vacancies, and admits straightforward generalization to multilayer graphene in Bernal stacking and graphite. The results clearly demonstrate that the magnetic behavior of multilayer graphene can be affected by mechanical transverse deformation.

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  • Received 9 May 2011

DOI:https://doi.org/10.1103/PhysRevB.84.075432

©2011 American Physical Society

Authors & Affiliations

Eduardo V. Castro1,2, María P. López-Sancho1, and María A. H. Vozmediano1

  • 1Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, E-28049 Madrid, Spain
  • 2Centro de Física do Porto, Rua do Campo Alegre 687, P-4169-007 Porto, Portugal

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Issue

Vol. 84, Iss. 7 — 15 August 2011

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