Relaxation mechanisms of the persistent spin helix

Matthias C. Lüffe, Janik Kailasvuori, and Tamara S. Nunner
Phys. Rev. B 84, 075326 – Published 12 August 2011

Abstract

We study the lifetime of the persistent spin helix in semiconductor quantum wells with equal Rashba and linear Dresselhaus spin-orbit coupling strengths. In order to address the temperature dependence of the relevant spin relaxation mechanisms we derive and solve a semiclassical spin diffusion equation taking into account the effects of spin-dependent impurity scattering, cubic Dresselhaus spin-orbit coupling and electron-electron interactions. For the experimentally relevant regime we find that the lifetime of the persistent spin helix is mainly determined by the interplay of cubic Dresselhaus spin-orbit interaction and electron-electron interactions. We propose that even longer lifetimes can be achieved by generating a spatially damped spin profile instead of the persistent spin helix state.

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  • Received 10 March 2011

DOI:https://doi.org/10.1103/PhysRevB.84.075326

©2011 American Physical Society

Authors & Affiliations

Matthias C. Lüffe1, Janik Kailasvuori2, and Tamara S. Nunner1

  • 1Dahlem Center for Complex Quantum Systems and Fachbereich Physik, Freie Universität Berlin, Arnimallee 14, D-14195 Berlin, Germany
  • 2Max-Planck-Institut für Physik komplexer Systeme, Nöthnitzer Straße 38, D-01189 Dresden, Germany

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Issue

Vol. 84, Iss. 7 — 15 August 2011

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