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Charge control in laterally coupled double quantum dots

G. Muñoz-Matutano, M. Royo, J. I. Climente, J. Canet-Ferrer, D. Fuster, P. Alonso-González, I. Fernández-Martínez, J. Martínez-Pastor, Y. González, L. González, F. Briones, and B. Alén
Phys. Rev. B 84, 041308(R) – Published 27 July 2011
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Abstract

We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric field applied along the quantum dot pair mutual axis. The number of confined electrons can be controlled with the external bias, leading to sharp energy shifts which we use to identify the emission from neutral and charged exciton complexes. Quantum tunneling of these electrons is proposed to explain the reversed ordering of the trion emission lines as compared to that of excitons in our system.

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  • Received 27 April 2011

DOI:https://doi.org/10.1103/PhysRevB.84.041308

©2011 American Physical Society

Authors & Affiliations

G. Muñoz-Matutano1, M. Royo2, J. I. Climente2, J. Canet-Ferrer1, D. Fuster1, P. Alonso-González3, I. Fernández-Martínez3, J. Martínez-Pastor1, Y. González3, L. González3, F. Briones3, and B. Alén3,*

  • 1ICMUV, Instituto de Ciencia de Materiales, Universidad de Valencia, P.O. Box 22085, E-46071 Valencia, Spain
  • 2Departament de Química Física i Analítica, Universitat Jaume I, Castellón, Spain
  • 3IMM, Instituto de Microelectrónica de Madrid (CNM, CSIC), Isaac Newton 8, 28760 Tres Cantos, Madrid, Spain

  • *benito.alen@imm.cnm.csic.es

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Issue

Vol. 84, Iss. 4 — 15 July 2011

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