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Electron g-factor anisotropy in symmetric (110)-oriented GaAs quantum wells

J. Hübner, S. Kunz, S. Oertel, D. Schuh, M. Pochwała, H. T. Duc, J. Förstner, T. Meier, and M. Oestreich
Phys. Rev. B 84, 041301(R) – Published 1 July 2011
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Abstract

We demonstrate by spin quantum beat spectroscopy that in undoped symmetric (110)-oriented GaAs/AlGaAs single quantum wells, even a symmetric spatial envelope wave function gives rise to an asymmetric in-plane electron Landé g-factor. The anisotropy is neither a direct consequence of the asymmetric in-plane Dresselhaus splitting nor a direct consequence of the asymmetric Zeeman splitting of the hole bands, but rather it is a pure higher-order effect that exists as well for diamond-type lattices. The measurements for various well widths are very well described within 14×14 band k·p theory and illustrate that the electron spin is an excellent meter variable for mapping out the internal—otherwise hidden—symmetries in two-dimensional systems. Fourth-order perturbation theory yields an analytical expression for the strength of the g-factor anisotropy, providing a qualitative understanding of the observed effects.

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  • Received 7 April 2011

DOI:https://doi.org/10.1103/PhysRevB.84.041301

©2011 American Physical Society

Authors & Affiliations

J. Hübner1,*, S. Kunz1, S. Oertel1, D. Schuh2, M. Pochwała3, H. T. Duc3, J. Förstner3, T. Meier3, and M. Oestreich1

  • 1Institute for Solid State Physics, Leibniz Universität Hannover, Appelstrasse 2, DE-30167 Hannover, Germany
  • 2Institute for Experimental and Applied Physics, Universität Regensburg, DE-93040 Regensburg, Germany
  • 3Department of Physics and CeOPP, Universität Paderborn, Warburger Str. 100, DE-33098 Paderborn, Germany

  • *jhuebner@nano.uni-hannover.de

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Issue

Vol. 84, Iss. 4 — 15 July 2011

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