Time-of-flight measurements of charge carrier diffusion in InxGa1xN/GaN quantum wells

J. Danhof, U. T. Schwarz, A. Kaneta, and Y. Kawakami
Phys. Rev. B 84, 035324 – Published 29 July 2011

Abstract

Time-of-flight experiments were performed to investigate charge carrier diffusion in InGaN quantum wells. A mere optical setup with high spatial resolution was established on the basis of confocal microphotoluminescence microscopy in order to measure charge carrier movement directly. We investigate a multiquantum well sample emitting light at about 510 nm and found an ambipolar lateral diffusion constant of 0.25±0.05cm2/s.

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  • Received 19 April 2011

DOI:https://doi.org/10.1103/PhysRevB.84.035324

©2011 American Physical Society

Authors & Affiliations

J. Danhof* and U. T. Schwarz

  • Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, D-79108 Freiburg, Germany and Albert-Ludwigs-Universität Freiburg, IMTEK, Georges-Köhler-Allee 106, D-79110 Freiburg, Germany

A. Kaneta and Y. Kawakami

  • Kyoto University, Katsura Campus, Nishikyo-ku, Kyoto 615-2312, Japan

  • *julia.danhof@iaf-extern.fraunhofer.de

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Issue

Vol. 84, Iss. 3 — 15 July 2011

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