Abstract
Time-of-flight experiments were performed to investigate charge carrier diffusion in InGaN quantum wells. A mere optical setup with high spatial resolution was established on the basis of confocal microphotoluminescence microscopy in order to measure charge carrier movement directly. We investigate a multiquantum well sample emitting light at about 510 nm and found an ambipolar lateral diffusion constant of .
- Received 19 April 2011
DOI:https://doi.org/10.1103/PhysRevB.84.035324
©2011 American Physical Society