Identification of the main contributions to the conductivity of epitaxial InN

T. A. Komissarova, V. N. Jmerik, S. V. Ivanov, O. Drachenko, X. Wang, and A. Yoshikawa
Phys. Rev. B 84, 035205 – Published 26 July 2011

Abstract

Complex effect of different contributions (spontaneously formed In nanoparticles, near-interface, surface, and bulk layers) on electrophysical properties of InN epitaxial films is studied. Transport parameters of the surface layer are determined from the Shubnikov-de Haas oscillations measured in undoped and Mg-doped InN films at magnetic fields up to 63 T. It is shown that the In nanoparticles, near-interface, and bulk layers play the dominant role in the electrical conductivity of InN, while influence of the surface layer is pronounced only in the compensated low-mobility InN:Mg films.

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  • Received 21 February 2011

DOI:https://doi.org/10.1103/PhysRevB.84.035205

©2011 American Physical Society

Authors & Affiliations

T. A. Komissarova*, V. N. Jmerik, and S. V. Ivanov

  • Ioffe Physical Technical Institute of the Russian Academy of Sciences, 26, Polytekhnicheskaya Str., St Petersburg 194021, Russia

O. Drachenko

  • Institute of Ion-Beam Physics and Materials Research and Dresden High Magnetic Field Laboratory (HLD), Helmholtz-Zentrum Dresden-Rossendorf (HZDR), D-01314 Dresden, Germany

X. Wang

  • State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People’s Republic of China

A. Yoshikawa

  • Graduate School of Electrical and Electronic Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan

  • *komissarova@beam.ioffe.ru

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Issue

Vol. 84, Iss. 3 — 15 July 2011

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