Abstract
Atomic motion of guest atoms inside semiconducting clathrate cages is considered an important source for glasslike thermal behavior. Ga and Ga nuclear magnetic resonance studies on type I BaGaSn show a clear low-temperature relaxation peak attributed to the influence of Ba rattling dynamics on the framework-atom resonance, with a quadrupolar relaxation mechanism as the leading contribution. Data are analyzed using a two-phonon Raman process, according to a recent theory involving localized anharmonic oscillators. Excellent agreement is obtained using this model, with the parameters corresponding to a uniform array of localized oscillators with very large anharmonicity.
- Received 11 May 2011
DOI:https://doi.org/10.1103/PhysRevB.84.024303
©2011 American Physical Society