Electrical control over the Fe(II) spin crossover in a single molecule: Theory and experiment

V. Meded, A. Bagrets, K. Fink, R. Chandrasekar, M. Ruben, F. Evers, A. Bernand-Mantel, J. S. Seldenthuis, A. Beukman, and H. S. J. van der Zant
Phys. Rev. B 83, 245415 – Published 22 June 2011

Abstract

We report on theoretical and experimental work involving a particular molecular switch, an [FeII(L)2]2+ complex, that utilizes a spin transition (“crossover”). The hallmark of this transition is a change of the spin of the metal ion, SFe=0 to SFe=2, at fixed oxidation state of the Fe ion. Combining density functional theory and first principles calculations, we demonstrate that within a single molecule this transition can be triggered by charging the ligands. In this process the total spin of the molecule, combining metal ion and ligands, crosses over from S=0 to S=1. Three-terminal transport through a single molecule shows indications of this transition induced by electric gating. Such an electric field control of the spin transition allows for a local, fast, and direct manipulation of molecular spins, an important prerequisite for molecular spintronics.

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  • Received 6 December 2010

DOI:https://doi.org/10.1103/PhysRevB.83.245415

©2011 American Physical Society

Authors & Affiliations

V. Meded, A. Bagrets, K. Fink, and R. Chandrasekar

  • Institute of Nanotechnology, Karlsruhe Institute of Technology, D-76021 Karlsruhe, Germany

M. Ruben*

  • Institute of Nanotechnology, Karlsruhe Institute of Technology, D-76021 Karlsruhe, Germany and
  • Institute de Physique et Chimie de Materiaux de Strasbourg (IPCMS), UMR 7504 CNRS-Université de Strasbourg, F-67034 Strasbourg, France

F. Evers

  • Institute of Nanotechnology, Karlsruhe Institute of Technology, D-76021 Karlsruhe, Germany and
  • Institut für Theorie der Kondensierten Materie, Karlsruhe Institute of Technology, D-76128 Karlsruhe, Germany

A. Bernand-Mantel, J. S. Seldenthuis, A. Beukman, and H. S. J. van der Zant

  • Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, NL-2600 GA, The Netherlands

  • *mario.ruben@kit.edu
  • ferdinand.evers@kit.edu
  • h.s.j.vanderzant@tudelft.nl

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Issue

Vol. 83, Iss. 24 — 15 June 2011

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