High-resolution electrical detection of free induction decay and Hahn echoes in phosphorus-doped silicon

Jinming Lu, Felix Hoehne, Andre R. Stegner, Lukas Dreher, Martin Stutzmann, Martin S. Brandt, and Hans Huebl
Phys. Rev. B 83, 235201 – Published 1 June 2011

Abstract

Paramagnetic centers in a solid-state environment usually give rise to inhomogeneously broadened electron paramagnetic resonance (EPR) lines, making conventionally detected free induction decay (FID) signals disappear within the spectrometer dead time. Here, high-resolution experimental results of an electrically detected FID of phosphorus donors in silicon epilayers with natural isotope composition are presented, showing Ramsey fringes within the first 150 ns. An analytical model is developed to account for the data obtained as well as for the results of analogous two-pulse echo experiments. The results of a numerical calculation are further presented to assess the capability of the method to study the exchange interaction between the donor spins and paramagnetic interface defect states. In the current samples, an upper limit of 5 MHz is obtained for the average exchange interaction.

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  • Received 28 January 2011

DOI:https://doi.org/10.1103/PhysRevB.83.235201

©2011 American Physical Society

Authors & Affiliations

Jinming Lu*, Felix Hoehne, Andre R. Stegner, Lukas Dreher, Martin Stutzmann, and Martin S. Brandt

  • Walter Schottky Institut, Technische Universität München, Am Coulombwall 4, D-85748 Garching, Germany

Hans Huebl

  • Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meißner-Straße 8, 85748 Garching, Germany

  • *Current address: Lehrstuhl für Werkstoffkunde und Werkstoffmechanik, Technische Universität München, Boltzmannstraße 15, D-85748 Garching, Germany.
  • Corresponding author; hoehne@wsi.tum.de

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Issue

Vol. 83, Iss. 23 — 15 June 2011

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