Diamond membrane surface after ion-implantation-induced graphitization for graphite removal: Molecular dynamics simulation

Amihai Silverman, Joan Adler, and Rafi Kalish
Phys. Rev. B 83, 224206 – Published 28 June 2011

Abstract

Fabrication of diamond membranes, wherein photonic crystals and other nanosized optical devices can be realized, is of great importance. Many spintronic devices are based on specific optically active atomic structures in diamond, such as the nitrogen-vacancy center, and rely on the membrane’s performance. One promising approach for realizing such membranes is by creating a heavily damaged layer (rich in broken bonds) in diamond by ion implantation. Following annealing, this layer converts to graphite, which can be chemically removed, leaving a free-standing diamond membrane. Unfortunately, the optical properties of the exposed diamond surface (the diamond-vacuum interface) of such membranes currently are insufficient for high-quality photonic devices. We present molecular dynamics studies of the atomic structure of the etchable graphite/diamond interface. Different implantation and annealing conditions are simulated. The results show that cold implantation, followed by high-temperature annealing (>1500°C) leads to the creation of the sharpest diamond-etchable graphite interface, which should exhibit optimal optical properties among diamond membranes created by the implantation/graphitization method.

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  • Received 14 February 2011

DOI:https://doi.org/10.1103/PhysRevB.83.224206

©2011 American Physical Society

Authors & Affiliations

Amihai Silverman

  • Taub Computer Center, Technion-IIT, Haifa 32000, Israel

Joan Adler

  • Department of Physics, Technion-IIT, Haifa 32000, Israel

Rafi Kalish

  • Department of Physics and Solid State Institute, Technion-IIT, Haifa 32000, Israel

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Issue

Vol. 83, Iss. 22 — 1 June 2011

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