Renormalization group analysis of the interacting resonant-level model at finite bias: Generic analytic study of static properties and quench dynamics

S. Andergassen, M. Pletyukhov, D. Schuricht, H. Schoeller, and L. Borda
Phys. Rev. B 83, 205103 – Published 6 May 2011; Erratum Phys. Rev. B 84, 039905 (2011)

Abstract

Using a real-time renormalization group method we study the minimal model of a quantum dot dominated by charge fluctuations, the two-lead interacting resonant level model, at finite bias voltage. We develop a set of RG equations to treat the case of weak and strong charge fluctuations, together with the determination of power-law exponents up to second order in the Coulomb interaction. We derive analytic expressions for the charge susceptibility, the steady-state current, and the conductance in the situation of arbitrary system parameters, in particular away from the particle-hole symmetric point and for asymmetric Coulomb interactions. In the asymmetric situation we find that power laws can be observed for the current only as a function of the level position (gate voltage) but in general not as a function of the voltage except for extremely large voltages. Furthermore, we study the quench dynamics after sudden switch-on of the level-lead couplings. The time evolution of the dot occupation and current is governed by exponential relaxation accompanied by voltage-dependent oscillations and characteristic algebraic decay.

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  • Received 27 October 2010

DOI:https://doi.org/10.1103/PhysRevB.83.205103

©2011 American Physical Society

Erratum

Authors & Affiliations

S. Andergassen1, M. Pletyukhov1, D. Schuricht1, H. Schoeller1, and L. Borda2,3

  • 1Institut für Theorie der Statistischen Physik, RWTH Aachen, D-52056 Aachen, Germany and JARA-Fundamentals of Future Information Technology
  • 2Physikalisches Institut, Universität Bonn, D-53115 Bonn, Germany
  • 3Department of Theoretical Physics and Condensed Matter Research Group of the HAS, TU Budapest, H-1111 Budapest, Hungary

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Vol. 83, Iss. 20 — 15 May 2011

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