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Grain boundary loops in graphene

Eric Cockayne, Gregory M. Rutter, Nathan P. Guisinger, Jason N. Crain, Phillip N. First, and Joseph A. Stroscio
Phys. Rev. B 83, 195425 – Published 12 May 2011
Physics logo See Synopsis: Carbon flowers

Abstract

Topological defects can affect the physical properties of graphene in unexpected ways. Harnessing their influence may lead to enhanced control of both material strength and electrical properties. Here we present a class of topological defects in graphene composed of a rotating sequence of dislocations that close on themselves, forming grain boundary loops that either conserve the number of atoms in the hexagonal lattice or accommodate vacancy or interstitial reconstruction, while leaving no unsatisfied bonds. One grain boundary loop is observed as a “flower” pattern in scanning tunneling microscopy studies of epitaxial graphene grown on SiC(0001). We show that the flower defect has the lowest energy per dislocation core of any known topological defect in graphene, providing a natural explanation for its growth via the coalescence of mobile dislocations.

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  • Received 3 March 2011

DOI:https://doi.org/10.1103/PhysRevB.83.195425

©2011 American Physical Society

Synopsis

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Carbon flowers

Published 12 May 2011

Researchers identify a new class of graphene defects.

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Authors & Affiliations

Eric Cockayne1,*, Gregory M. Rutter2,3, Nathan P. Guisinger3,†, Jason N. Crain3, Phillip N. First2, and Joseph A. Stroscio3,*

  • 1Ceramics Division, NIST, Gaithersburg, Maryland 20899, USA
  • 2School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
  • 3Center for Nanoscale Science and Technology, NIST, Gaithersburg, Maryland 20899, USA

  • *Authors to whom correspondence should be addressed. eric.cockayne@nist.gov and joseph.stroscio@nist.gov
  • Present address: Argonne National Laboratory, Argonne, IL.

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Issue

Vol. 83, Iss. 19 — 15 May 2011

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