Theory of single electron spin relaxation in Si/SiGe lateral coupled quantum dots

Martin Raith, Peter Stano, and Jaroslav Fabian
Phys. Rev. B 83, 195318 – Published 13 May 2011

Abstract

We investigate the spin relaxation induced by acoustic phonons in the presence of spin-orbit interactions in single electron Si/SiGe lateral coupled quantum dots. The relaxation rates are computed numerically in single and double quantum dots, in in-plane and perpendicular magnetic fields. The deformation potential of acoustic phonons is taken into account for both transverse and longitudinal polarizations, and their contributions to the total relaxation rate are discussed with respect to the dilatation and shear potential constants. We find that in single dots the spin relaxation rate scales approximately with the seventh power of the magnetic field, in line with a recent experiment. In double dots the relaxation rate is much more sensitive to the dot spectrum structure, as it is often dominated by a spin hot spot. The anisotropy of the spin-orbit interactions gives rise to easy passages, special directions of the magnetic field for which the relaxation is strongly suppressed. Quantitatively, the spin relaxation rates in Si are typically two orders of magnitude smaller than in GaAs due to the absence of the piezoelectric phonon potential and generally weaker spin-orbit interactions.

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  • Received 20 January 2011

DOI:https://doi.org/10.1103/PhysRevB.83.195318

©2011 American Physical Society

Authors & Affiliations

Martin Raith1, Peter Stano2,3, and Jaroslav Fabian1

  • 1Institute for Theoretical Physics, University of Regensburg, D-93040 Regensburg, Germany
  • 2Physics Department, University of Arizona, Tucson, Arizona 85716, USA
  • 3Institute of Physics, Slovak Academy of Sciences, 845 11 Bratislava, Slovakia

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Issue

Vol. 83, Iss. 19 — 15 May 2011

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