Interfacial spin-orbit splitting and current-driven spin torque in anisotropic tunnel junctions

A. Manchon
Phys. Rev. B 83, 172403 – Published 17 May 2011

Abstract

Spin transport in magnetic tunnel junctions comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is investigated theoretically. Due to the presence of interfacial SOI, a current-driven spin torque can be generated at the second order in SOI, even in the absence of an external spin polarizer. This torque possesses two components, one in plane and one perpendicular to the plane of rotation, that can induce either current-driven magnetization switching from an in-plane to out-of-plane configuration or magnetization precessions, similar to spin transfer torque in spin valves. Consequently, it appears that it is possible to control the magnetization steady state and dynamics by either varying the bias voltage or electrically modifying the SOI at the interface.

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  • Received 21 March 2011

DOI:https://doi.org/10.1103/PhysRevB.83.172403

©2011 American Physical Society

Authors & Affiliations

A. Manchon

  • Division of Physical Science and Engineering, Materials Science and Engineering, KAUST, Thuwal 23955-6900, Saudi Arabia

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Issue

Vol. 83, Iss. 17 — 1 May 2011

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