Hyperfine interactions in silicon quantum dots

Lucy V. C. Assali, Helena M. Petrilli, Rodrigo B. Capaz, Belita Koiller, Xuedong Hu, and S. Das Sarma
Phys. Rev. B 83, 165301 – Published 4 April 2011

Abstract

A fundamental interaction for electrons is their hyperfine interaction (HFI) with nuclear spins. HFI is well characterized in free atoms and molecules, and is crucial for purposes from chemical identification of atoms to trapped ion quantum computing. However, electron wave functions near atomic sites, therefore HFI, are often not accurately known in solids. Here we perform an all-electron calculation for conduction electrons in silicon and obtain reliable information on HFI. We verify the outstanding quantum spin coherence in Si, which is critical for fault-tolerant solid state quantum computing.

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  • Received 31 December 2010

DOI:https://doi.org/10.1103/PhysRevB.83.165301

©2011 American Physical Society

Authors & Affiliations

Lucy V. C. Assali1, Helena M. Petrilli1, Rodrigo B. Capaz2, Belita Koiller2, Xuedong Hu3, and S. Das Sarma4

  • 1Instituto de Física, Universidade de São Paulo, CP 66318, 05315-970 São Paulo, SP, Brazil
  • 2Instituto de Física, Universidade Federal do Rio de Janeiro, Caixa Postal 68528, 21941-972 Rio de Janeiro, Brazil
  • 3Department of Physics, State University of New York, Buffalo, New York 14260-1500, USA
  • 4Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park, Maryland 20742-4111, USA

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Issue

Vol. 83, Iss. 16 — 15 April 2011

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