Landau levels and band bending in few-layer epitaxial graphene

Hongki Min, S. Adam, Young Jae Song, Joseph A. Stroscio, M. D. Stiles, and A. H. MacDonald
Phys. Rev. B 83, 155430 – Published 18 April 2011

Abstract

The carrier density distributions in few-layer-graphene systems grown on the carbon face of silicon carbide can be altered by the presence of a scanning tunneling microscope (STM) tip used to probe top-layer electronic properties, and by a perpendicular magnetic field which induces well-defined Landau levels. Hartree approximation calculations in the perpendicular field case show that charge tends to rearrange between the layers so that the filling factors of most layers are pinned at integer values. We use our analysis to provide insight into the role of buried layers in recent few-layer-graphene STM studies and discuss the limitations of our model.

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  • Received 12 January 2011

DOI:https://doi.org/10.1103/PhysRevB.83.155430

©2011 American Physical Society

Authors & Affiliations

Hongki Min1,2,*, S. Adam1, Young Jae Song1,2, Joseph A. Stroscio1, M. D. Stiles1, and A. H. MacDonald3

  • 1Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-6202, USA
  • 2Maryland NanoCenter, University of Maryland, College Park, Maryland 20742, USA
  • 3Department of Physics, University of Texas at Austin, Austin, Texas 78712, USA

  • *hmin@umd.edu; Current address: Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park, Maryland 20742, USA.

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Vol. 83, Iss. 15 — 15 April 2011

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