Enhanced thermopower under a time-dependent gate voltage

Adeline Crépieux, Fedor Šimkovic, Benjamin Cambon, and Fabienne Michelini
Phys. Rev. B 83, 153417 – Published 25 April 2011; Erratum Phys. Rev. B 89, 239907 (2014)

Abstract

We derive formal expressions of time-dependent energy and heat currents through a nanoscopic device using the Keldysh nonequilibrium Green function technique. Numerical results are reported for a metal-dot-metal junction where the dot level energy is abruptly changed by a step-shaped voltage pulse. Analytical linear responses are obtained for the time-dependent thermoelectric coefficients. We show that in the transient regime the Seebeck coefficient can be enhanced by an amount (as much as 40%) controlled by both the dot energy and the height of the voltage step.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 22 February 2011

DOI:https://doi.org/10.1103/PhysRevB.83.153417

©2011 American Physical Society

Erratum

Erratum: Enhanced thermopower under a time-dependent gate voltage [Phys. Rev. B 83, 153417 (2011)]

Adeline Crépieux, Fedor Šimkovic, Benjamin Cambon, and Fabienne Michelini
Phys. Rev. B 89, 239907 (2014)

Authors & Affiliations

Adeline Crépieux1, Fedor Šimkovic1, Benjamin Cambon1, and Fabienne Michelini2

  • 1Centre de Physique Théorique, Aix-Marseille Université, 163 avenue de Luminy, F-13288 Marseille, France
  • 2Institut Matériaux Microélectronique Nanosciences de Provence, Aix-Marseille Université, Avenue Escadrille Normandie Niemen, F-13397 Marseille, France

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 83, Iss. 15 — 15 April 2011

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×