Tight-binding theory for the thermal evolution of optical band gaps in semiconductors and superlattices

S. Abdollahi Pour, B. Movaghar, and M. Razeghi
Phys. Rev. B 83, 115331 – Published 28 March 2011

Abstract

A method to handle the variation of the band gap with temperature in direct band-gap III–V semiconductors and superlattices using an empirical tight-binding method has been developed. The approach follows closely established procedures and allows parameter variations which give rise to perfect fits to the experimental data. We also apply the tight-binding method to the far more complex problem of band structures in type-II infrared superlattices for which we have access to original experimental data recently acquired by our group. Given the close packing of bands in small band-gap type-II designs, k⃗·p⃗ methods become difficult to handle, and it turns out that the sp3s* tight-binding scheme is a practical and powerful asset. Other approaches to band-gap shrinkage explored in the past are discussed, scrutinized, and compared. This includes the lattice expansion term, the phonon softening mechanism, and the electron-phonon polaronic shifts calculated in perturbation theory.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 13 December 2010

DOI:https://doi.org/10.1103/PhysRevB.83.115331

©2011 American Physical Society

Authors & Affiliations

S. Abdollahi Pour, B. Movaghar, and M. Razeghi

  • Center for Quantum Devices, Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, USA

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 83, Iss. 11 — 15 March 2011

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×