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Determination of substrate pinning in epitaxial and supported graphene layers via Raman scattering

Nicola Ferralis, Roya Maboudian, and Carlo Carraro
Phys. Rev. B 83, 081410(R) – Published 17 February 2011

Abstract

The temperature-induced shift of the Raman G line in epitaxial graphene on SiC and Ni surfaces, as well as in graphene supported on SiO2, is investigated with Raman spectroscopy. The thermal shift rate of epitaxial graphene on 6H-SiC(0001) is found to be about three times that of freestanding graphene. This result is explained quantitatively as a consequence of pinning by the substrate. In contrast, graphene grown on polycrystalline Ni films is shown to be unpinned, i.e., to behave elastically as freestanding, despite the relatively strong interaction with the metal substrate. Moreover, it is shown that the transfer of exfoliated graphene layers onto a supporting substrate can result in pinned or unpinned layers, depending on the transfer protocol.

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  • Received 21 January 2011

DOI:https://doi.org/10.1103/PhysRevB.83.081410

©2011 American Physical Society

Authors & Affiliations

Nicola Ferralis*, Roya Maboudian, and Carlo Carraro

  • Department of Chemical and Biomolecular Engineering, University of California, Berkeley, California 94720, USA

  • *ferralis@mit.edu; Current address: Department of Materials Science and Engineering, MIT, Cambridge, Massachusetts 02139, USA.
  • carraro@berkeley.edu

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Issue

Vol. 83, Iss. 8 — 15 February 2011

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