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g-factor anisotropy in a GaAs/AlxGa1xAs quantum well probed by electron spin resonance

Yu. A. Nefyodov, A. V. Shchepetilnikov, I. V. Kukushkin, W. Dietsche, and S. Schmult
Phys. Rev. B 83, 041307(R) – Published 31 January 2011

Abstract

The anisotropy of electron g-factor is investigated for several GaAs/AlxGa1xAs heterostructures using an electrically detected electron spin resonance technique at liquid helium temperature. For a modulation-doped 25-nm single quantum well with electron density n=4×1011 cm2 we extracted an out-of-plane g-factor value of |gzz|=0.410 and in-plane values of |gyy|=0.359 and |gxx|=0.289. In addition, linear in magnetic field corrections to the g-factor components were also extracted and strong anisotropy in their values was established.

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  • Received 9 December 2010

DOI:https://doi.org/10.1103/PhysRevB.83.041307

©2011 American Physical Society

Authors & Affiliations

Yu. A. Nefyodov1, A. V. Shchepetilnikov1, I. V. Kukushkin1, W. Dietsche2, and S. Schmult2

  • 1Institute of Solid State Physics RAS, 142432 Chernogolovka, Moscow District, Russia
  • 2Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, 70569 Stuttgart, Germany

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Issue

Vol. 83, Iss. 4 — 1 January 2011

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