Local interlayer tunneling between two-dimensional electron systems in the ballistic regime

Katherine Luna, Eun-Ah Kim, Paul Oreto, Steven A. Kivelson, and David Goldhaber-Gordon
Phys. Rev. B 82, 235317 – Published 15 December 2010

Abstract

We study a theoretical model of virtual scanning tunneling microscopy (VSTM) [A. Sciambi, M. Pelliccione, M. Lilly, S. Bank, A. Gossard, L. Pfeiffer, K. West, and D. Goldhaber-Gordon, arXiv:1008.0668 (unpublished); A. Sciambi, M. Pelliccione, S. R. Bank, A. C. Gossard, and D. Goldhaber-Gordon, Appl. Phys. Lett. 97, 132103 (2010)]: a proposed application of interlayer tunneling in a bilayer system to locally probe a two-dimensional electron system (2DES) in a semiconductor heterostructure. We consider tunneling for the case where transport in the 2DESs is ballistic and show that the zero-bias anomaly is suppressed by extremely efficient screening. Since such an anomaly would complicate the interpretation of data from VSTM, this result is encouraging for efforts to implement such a microscopy technique.

  • Figure
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  • Received 17 May 2009

DOI:https://doi.org/10.1103/PhysRevB.82.235317

©2010 The American Physical Society

Authors & Affiliations

Katherine Luna, Eun-Ah Kim*, Paul Oreto, Steven A. Kivelson, and David Goldhaber-Gordon

  • Department of Physics, Stanford University, Stanford, California 94305-4045, USA and Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA

  • *Permanent address: Department of Physics, Cornell University, Ithaca, New York 14853, USA.

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Vol. 82, Iss. 23 — 15 December 2010

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