Second-generation charge-optimized many-body potential for Si/SiO2 and amorphous silica

Tzu-Ray Shan (單子睿), Bryce D. Devine, Jeffery M. Hawkins, Aravind Asthagiri, Simon R. Phillpot, and Susan B. Sinnott
Phys. Rev. B 82, 235302 – Published 1 December 2010

Abstract

A second-generation dynamic charge transfer, many-body potential function is proposed for crystalline and amorphous silica, and for silicon. The potential is based on the first-generation charge-optimized many-body (COMB) potential for these materials. The materials fidelity of the proposed formalism is demonstrated for several crystalline silica polymorphs and amorphous silica. The correct order of most of the experimentally observed polymorphs of the oxide is obtained and a significant improvement is found for the mechanical properties over the predictions of the first-generation potential. Satisfactory agreement is obtained for predictions of structural properties and defect formation energies compared to experimental and first-principles computational values. This potential can be used in conjunction with recently developed COMB potentials for the Hf/HfO2 systems.

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  • Received 11 January 2010
  • Publisher error corrected 6 December 2010

DOI:https://doi.org/10.1103/PhysRevB.82.235302

© 2010 The American Physical Society

Corrections

6 December 2010

Erratum

Publisher's Note: Second-generation charge-optimized many-body potential for Si/SiO2 and amorphous silica [Phys. Rev. B 82, 235302 (2010)]

Tzu-Ray Shan (單子睿), Bryce D. Devine, Jeffery M. Hawkins, Aravind Asthagiri, Simon R. Phillpot, and Susan B. Sinnott
Phys. Rev. B 82, 239902 (2010)

Authors & Affiliations

Tzu-Ray Shan (單子睿)1, Bryce D. Devine1, Jeffery M. Hawkins2, Aravind Asthagiri2,*, Simon R. Phillpot1, and Susan B. Sinnott1,†

  • 1Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400, USA
  • 2Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611-6005, USA

  • *Present address: Department of Chemical and Biomolecular Engineering, The Ohio State University, Columbus, OH 43210.
  • Corresponding author; ssinn@mse.ufl.edu

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Issue

Vol. 82, Iss. 23 — 15 December 2010

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