Detection and quantification of inverse spin Hall effect from spin pumping in permalloy/normal metal bilayers

O. Mosendz, V. Vlaminck, J. E. Pearson, F. Y. Fradin, G. E. W. Bauer, S. D. Bader, and A. Hoffmann
Phys. Rev. B 82, 214403 – Published 1 December 2010

Abstract

Spin pumping is a mechanism that generates spin currents from ferromagnetic resonance over macroscopic interfacial areas, thereby enabling sensitive detection of the inverse spin Hall effect that transforms spin into charge currents in nonmagnetic conductors. Here we study the spin-pumping-induced voltages due to the inverse spin Hall effect in permalloy/normal metal bilayers integrated into coplanar waveguides for different normal metals and as a function of angle of the applied magnetic field direction, as well as microwave frequency and power. We find good agreement between experimental data and a theoretical model that includes contributions from anisotropic magnetoresistance and inverse spin Hall effect. The analysis provides consistent results over a wide range of experimental conditions as long as the precise magnetization trajectory is taken into account. The spin Hall angles for Pt, Pd, Au, and Mo were determined with high precision to be 0.013±0.002, 0.0064±0.001, 0.0035±0.0003, and 0.0005±0.0001, respectively.

    • Received 27 August 2010

    DOI:https://doi.org/10.1103/PhysRevB.82.214403

    ©2010 The American Physical Society

    Authors & Affiliations

    O. Mosendz1,*, V. Vlaminck1, J. E. Pearson1, F. Y. Fradin1, G. E. W. Bauer2, S. D. Bader1,3, and A. Hoffmann1,†

    • 1Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
    • 2Kavli Institute of NanoScience, Delft University of Technology, 2628 CJ Delft, The Netherlands
    • 3Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, USA

    • *Present address: San Jose Research Center, Hitachi Global Storage Technologies, San Jose, California 95135, USA.
    • hoffmann@anl.gov

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    Issue

    Vol. 82, Iss. 21 — 1 December 2010

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