Strong influence of complex band structure on tunneling electroresistance: A combined model and ab initio study

N. F. Hinsche, M. Fechner, P. Bose, S. Ostanin, J. Henk, I. Mertig, and P. Zahn
Phys. Rev. B 82, 214110 – Published 14 December 2010

Abstract

The tunneling electroresistance (TER) for ferroelectric tunnel junctions (FTJs) with BaTiO3 and PbTiO3 barriers is calculated by combining the microscopic electronic structure of the barrier material with a macroscopic model for the electrostatic potential, which is caused by the ferroelectric polarization. The TER ratio is investigated in dependence on the intrinsic polarization, the chemical potential, and the screening properties of the electrodes. A change in sign in the TER ratio is obtained for both barrier materials in dependence on the chemical potential. The inverse imaginary Fermi velocity describes the microscopic origin of this effect; it qualitatively reflects the variation and the sign reversal of the TER. The quantity of the imaginary Fermi velocity allows to obtain detailed information on the transport properties of FTJs by analyzing the complex band structure of the barrier material.

    • Received 5 July 2010

    DOI:https://doi.org/10.1103/PhysRevB.82.214110

    ©2010 The American Physical Society

    Authors & Affiliations

    N. F. Hinsche1,*, M. Fechner2, P. Bose1, S. Ostanin2, J. Henk2, I. Mertig1,2, and P. Zahn1

    • 1Institut für Physik, Martin-Luther-Universität Halle–Wittenberg, D-06099 Halle, Germany
    • 2Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany

    • *nicki.hinsche@physik.uni-halle.de

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    Issue

    Vol. 82, Iss. 21 — 1 December 2010

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