Origin of UV-induced poling inhibition in lithium niobate crystals

H. Steigerwald, M. Lilienblum, F. von Cube, Y. J. Ying, R. W. Eason, S. Mailis, B. Sturman, E. Soergel, and K. Buse
Phys. Rev. B 82, 214105 – Published 9 December 2010

Abstract

Short-term exposure of the +z face of LiNbO3 crystals to focused UV laser light leads to persistent inhibition of ferroelectric domain reversal at the irradiated area, a phenomenon referred to as “poling inhibition.” Different types of crystals (stoichiometric, congruent, or Mg-doped ones) are exposed, creating the so-called “latent state” and domain growth during subsequent electric-field poling is visualized. The latent state is robust against thermal annealing up to 250°C and uniform illumination. With the tip of a scanning force microscope the coercive field is mapped, showing not only the expected resistance against domain reversal in the UV-irradiated region but also easier poling adjacent to the UV-irradiated section. These results and theoretical estimates point to the following mechanism of poling inhibition: the UV light-induced heating results in a local reduction of the lithium concentration, via thermodiffusion. The required charge compensation is provided by UV-excited free electrons/holes. After cooling, the lithium ions become immobile, and the reduced lithium concentration causes a strong local increase in the coercive field in the exposed area, while the increased Li concentration next to this area reduces the coercive field.

    • Received 2 September 2010

    DOI:https://doi.org/10.1103/PhysRevB.82.214105

    ©2010 American Physical Society

    Authors & Affiliations

    H. Steigerwald1, M. Lilienblum1, F. von Cube1, Y. J. Ying2, R. W. Eason2, S. Mailis2, B. Sturman3, E. Soergel1, and K. Buse1

    • 1Institute of Physics, University of Bonn, Wegelerstraße 8, 53115 Bonn, Germany
    • 2Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, United Kingdom
    • 3Institute of Automation and Electrometry, 630090 Novosibirsk, Russia

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    Issue

    Vol. 82, Iss. 21 — 1 December 2010

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