Abstract
We show that once the effects of valley splitting and intervalley scattering are incorporated, the two-parameter scaling theory consistently describes the metallic phase in silicon metal-oxide-semiconductor field-effect transistors down to the lowest accessible temperatures. The observed large enhancement of the conductance and the effective electron-electron interaction amplitude as the temperature is lowered are explained quantitatively.
- Received 21 July 2010
DOI:https://doi.org/10.1103/PhysRevB.82.201308
©2010 American Physical Society