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Test of the scaling theory in two dimensions in the presence of valley splitting and intervalley scattering in Si-MOSFETs

Alexander Punnoose, Alexander M. Finkel’stein, A. Mokashi, and S. V. Kravchenko
Phys. Rev. B 82, 201308(R) – Published 12 November 2010

Abstract

We show that once the effects of valley splitting and intervalley scattering are incorporated, the two-parameter scaling theory consistently describes the metallic phase in silicon metal-oxide-semiconductor field-effect transistors down to the lowest accessible temperatures. The observed large enhancement of the conductance and the effective electron-electron interaction amplitude as the temperature is lowered are explained quantitatively.

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  • Received 21 July 2010

DOI:https://doi.org/10.1103/PhysRevB.82.201308

©2010 American Physical Society

Authors & Affiliations

Alexander Punnoose*

  • Physics Department, City College of the City, University of New York, New York, New York 10031, USA

Alexander M. Finkel’stein

  • Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 76100, Israel and Department of Physics, Texas A&M University, College Station, Texas 77843, USA

A. Mokashi and S. V. Kravchenko

  • Physics Department, Northeastern University, Boston, Massachusetts 02115, USA

  • *punnoose@sci.ccny.cuny.edu

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Vol. 82, Iss. 20 — 15 November 2010

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