Electronic and optical properties of the Mg2xFexSiO4 spinel: From band insulator to Mott insulator

Kamil Tokár, Przemysław Piekarz, Mariana Derzsi, Paweł T. Jochym, Jan Łażewski, Małgorzata Sternik, Andrzej M. Oleś, and Krzysztof Parlinski
Phys. Rev. B 82, 195116 – Published 11 November 2010

Abstract

The crystal properties and electronic structure of Mg2xFexSiO4 spinel have been studied using the density-functional theory including the local Hubbard interaction U within the generalized gradient approximation. The lattice constant depends linearly on increasing iron concentration x in agreement with the Vegard’s law. The contributions of the Fe(t2g) and Fe(eg) orbitals to the electronic density of states have been determined and their crucial role in the band-gap formation has been elucidated. We explain the decrease in the insulating gap with increasing iron concentration on the basis of the Mott-Hubbard picture of correlated insulators. Thus, it was revealed that the electronic structure of Mg2xFexSiO4 evolves from the band insulator found in Mg2SiO4 to the Mott insulator with increasing iron concentration. We present also the absorption spectra derived from the complex dielectric tensor, which are in good qualitative agreement with the previously reported experimental data for a wide range of energies.

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  • Received 4 August 2010

DOI:https://doi.org/10.1103/PhysRevB.82.195116

©2010 American Physical Society

Authors & Affiliations

Kamil Tokár, Przemysław Piekarz, Mariana Derzsi*, Paweł T. Jochym, Jan Łażewski, Małgorzata Sternik, Andrzej M. Oleś, and Krzysztof Parlinski

  • Institute of Nuclear Physics, Polish Academy of Sciences, Radzikowskiego 152, 31-342 Kraków, Poland

  • *Present address: University of Warsaw, Interdisciplinary Centre for Mathematical and Computational Modeling, Pawinskiego 5a, 02-106 Warsaw, Poland.

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Vol. 82, Iss. 19 — 15 November 2010

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