Hydrogen donors in SnO2 studied by infrared spectroscopy and first-principles calculations

W. M. Hlaing Oo, S. Tabatabaei, M. D. McCluskey, J. B. Varley, A. Janotti, and C. G. Van de Walle
Phys. Rev. B 82, 193201 – Published 3 November 2010

Abstract

Hydrogen is a potentially important source of n-type conductivity in oxide materials. We have investigated hydrogen in tin oxide (SnO2), a wide-band-gap semiconductor with applications as a transparent conductor and in gas sensors. Infrared (IR) spectroscopy and electrical measurements indicate that hydrogen binds to a host oxygen atom and increases the conductivity. First-principles calculations confirm that interstitial hydrogen acts as a shallow donor (Hi+). Our calculations also indicate that Hi+ diffuses easily and combines with Sn vacancies into stable (VSn-H)3 complexes, with the calculated O-H frequencies in agreement with the experimental values. These results suggest that interstitial hydrogen acts as a shallow, mobile donor in a range of oxide materials.

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  • Received 27 August 2010

DOI:https://doi.org/10.1103/PhysRevB.82.193201

©2010 American Physical Society

Authors & Affiliations

W. M. Hlaing Oo1, S. Tabatabaei1, M. D. McCluskey1,*, J. B. Varley2, A. Janotti3, and C. G. Van de Walle3,†

  • 1Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814, USA
  • 2Department of Physics, University of California, Santa Barbara, California 93106-9530, USA
  • 3Materials Department, University of California, Santa Barbara, California 93106-5050, USA

  • *mattmcc@wsu.edu
  • vandewalle@mrl.ucsb.edu

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Vol. 82, Iss. 19 — 15 November 2010

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