Abstract
Hydrogen is a potentially important source of -type conductivity in oxide materials. We have investigated hydrogen in tin oxide , a wide-band-gap semiconductor with applications as a transparent conductor and in gas sensors. Infrared (IR) spectroscopy and electrical measurements indicate that hydrogen binds to a host oxygen atom and increases the conductivity. First-principles calculations confirm that interstitial hydrogen acts as a shallow donor . Our calculations also indicate that diffuses easily and combines with Sn vacancies into stable complexes, with the calculated O-H frequencies in agreement with the experimental values. These results suggest that interstitial hydrogen acts as a shallow, mobile donor in a range of oxide materials.
- Received 27 August 2010
DOI:https://doi.org/10.1103/PhysRevB.82.193201
©2010 American Physical Society