LDA+U and tight-binding electronic structure of InN nanowires

A. Molina-Sánchez, A. García-Cristóbal, A. Cantarero, A. Terentjevs, and G. Cicero
Phys. Rev. B 82, 165324 – Published 20 October 2010

Abstract

In this paper we employ a combined ab initio and tight-binding approach to obtain the electronic and optical properties of hydrogenated Indium nitride (InN) nanowires. We first discuss InN band structure for the wurtzite structure calculated at the LDA+U level and use this information to extract the parameters needed for an empirical tight-binging implementation. These parameters are then employed to calculate the electronic and optical properties of InN nanowires in a diameter range that would not be affordable by ab initio techniques. The reliability of the large nanowires results is assessed by explicitly comparing the electronic structure of a small diameter wire studied both at LDA+U and tight-binding level.

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  • Received 30 July 2010

DOI:https://doi.org/10.1103/PhysRevB.82.165324

©2010 American Physical Society

Authors & Affiliations

A. Molina-Sánchez, A. García-Cristóbal, and A. Cantarero

  • Instituto de Ciencia de Materiales, Universidad de Valencia, E-46071 Valencia, Spain

A. Terentjevs

  • Physics Department, Politecnico of Torino, Torino, Italy

G. Cicero

  • Chemistry and Materials Science Engineering Department, Politecnico of Torino, Torino, Italy

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Issue

Vol. 82, Iss. 16 — 15 October 2010

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