Abstract
We have investigated shot noise and conduction of graphene field-effect nanoribbon devices at low temperature. By analyzing the exponential characteristics of our devices in the transport gap region, we found out that transport follows variable range hopping laws at intermediate bias voltages . In parallel, we observe a strong shot noise suppression leading to very low Fano factors. The strong suppression of shot noise is consistent with inelastic hopping, in crossover from one- to two-dimensional regime, indicating that the localization length in our nanoribbons.
- Received 22 May 2010
DOI:https://doi.org/10.1103/PhysRevB.82.161405
©2010 American Physical Society