Effect of disorder on the electronic Raman scattering in the superconducting state of iron pnictides

G. R. Boyd, P. J. Hirschfeld, and T. P. Devereaux
Phys. Rev. B 82, 134506 – Published 5 October 2010

Abstract

Electronic Raman scattering measures a polarization-dependent scattering intensity which can provide information about the location of nodes in the energy gap of an unconventional superconductor as well as its overall symmetry. In this paper, we calculate the Raman intensity in the presence of disorder for several models of the iron pnictide superconducting state. We include, for completeness, d-wave and isotropic s± responses in addition to more realistic extended s± superconducting gaps. The effect of disorder is modeled using a self-consistent T-matrix approximation, and is studied in the limits of isotropic and intraband-only scattering. We show how recent experiments on Ba(Fe1xCox)2As2 may be consistent with “node lifting” by intraband disorder.

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  • Received 28 June 2010

DOI:https://doi.org/10.1103/PhysRevB.82.134506

©2010 American Physical Society

Authors & Affiliations

G. R. Boyd1, P. J. Hirschfeld1, and T. P. Devereaux2,3

  • 1Department of Physics, University of Florida, Gainesville, Florida 32611, USA
  • 2Stanford Institute for Materials and Energy Science, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
  • 3Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA

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Issue

Vol. 82, Iss. 13 — 1 October 2010

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