Abstract
We study the relaxation of a single electron spin in a circular gate-tunable quantum dot in gapped graphene. Direct coupling of the electron spin to out-of-plane phonons via the intrinsic spin-orbit coupling leads to a relaxation time which is independent of the field at low fields. We also find that Rashba spin-orbit induced admixture of opposite spin states in combination with the emission of in-plane phonons provides various further relaxation channels via deformation potential and bond-length change. In the absence of valley mixing, spin relaxation takes place within each valley separately and thus time-reversal symmetry is effectively broken, therefore inhibiting the Van Vleck cancellation at known from GaAs quantum dots. Both the absence of the Van Vleck cancellation as well as the out-of-plane phonons lead to a behavior of the spin-relaxation rate at low magnetic fields which is markedly different from the known results for GaAs. For low- fields, we find that the rate is constant in and then crosses over to or at higher fields.
- Received 6 August 2010
DOI:https://doi.org/10.1103/PhysRevB.82.125401
©2010 American Physical Society