Effect of high-κ gate dielectrics on charge transport in graphene-based field effect transistors

Aniruddha Konar, Tian Fang, and Debdeep Jena
Phys. Rev. B 82, 115452 – Published 29 September 2010

Abstract

The effect of various dielectrics on charge mobility in single-layer graphene is investigated. By calculating the remote optical phonon scattering arising from the polar substrates, and combining it with their effect on Coulombic impurity scattering, a comprehensive picture of the effect of dielectrics on charge transport in graphene emerges. It is found that though high-κ dielectrics can strongly reduce Coulombic scattering by dielectric screening, scattering from surface phonon modes arising from them wash out this advantage. Calculation shows that within the available choice of dielectrics, there is not much room for improving carrier mobility in actual devices at room temperatures.

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  • Received 4 February 2009

DOI:https://doi.org/10.1103/PhysRevB.82.115452

©2010 American Physical Society

Authors & Affiliations

Aniruddha Konar*, Tian Fang, and Debdeep Jena

  • Department of Physics and Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA

  • *akonar@nd.edu

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Issue

Vol. 82, Iss. 11 — 15 September 2010

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