Kohn-Sham potential with discontinuity for band gap materials

M. Kuisma, J. Ojanen, J. Enkovaara, and T. T. Rantala
Phys. Rev. B 82, 115106 – Published 7 September 2010

Abstract

We model a Kohn-Sham potential with the discontinuity at integer particle numbers starting from the approximation by (GLLB) Gritsenko et al. [Phys. Rev. A 51, 1944 (1995)]. We evaluate the Kohn-Sham gap and the discontinuity to obtain the quasiparticle gap. This allows us to compare the Kohn-Sham gaps to those obtained by accurate many-body perturbation-theory-based optimized potential methods. In addition, the resulting quasiparticle band gap is compared to experimental gaps. In the GLLB model potential, the exchange-correlation hole is modeled using a generalized gradient approximation (GGA) energy density and the response of the hole-to-density variations is evaluated by using the common-denominator approximation and homogeneous electron-gas-based assumptions. In our modification, we have chosen the PBEsol potential as the GGA to model the exchange hole and add a consistent correlation potential. The method is implemented in the GPAW code, which allows efficient parallelization to study large systems. A fair agreement for Kohn-Sham and the quasiparticle band gaps with semiconductors and other band gap materials is obtained with a potential which is as fast as GGA to calculate.

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  • Received 2 March 2010

DOI:https://doi.org/10.1103/PhysRevB.82.115106

©2010 American Physical Society

Authors & Affiliations

M. Kuisma1, J. Ojanen1, J. Enkovaara2, and T. T. Rantala1

  • 1Department of Physics, Tampere University of Technology, P.O. Box 692, FI-33101 Tampere, Finland
  • 2CSC-IT Center for Science Ltd., P.O. Box 405, FI-02101 Espoo, Finland

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Issue

Vol. 82, Iss. 11 — 15 September 2010

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