Figure 1
(Color online) (a) Device and measurement circuit. Patterned topgates define three quantum dots and QPC charge sensors on left and right; voltages applied to gates L and R control the energy levels of the device, while voltages
and
tune QPC conductances
and
. The QPCs are incorporated into resonant tank circuits comprising chip inductors
and
combined with parasitic capacitances
and
; bias tees allow the QPCs to be measured both at DC and via RF reflectometry. An RF carrier, generated by combining signals at resonant frequencies
and
, is applied to the device via a directional coupler; the reflected signal, after amplification, is demodulated by mixing with the original carrier frequencies to yield voltages
and
sensitive predominantly to left and right QPCs, respectively. Two RF switches (Minicircuits ZASWA-2-
) allow incident and reflected signals to be blanked except during device readout, reducing backaction and preventing gate pulse coupling to the demodulation circuit. (b) Microwave transmission
of the cryogenic part of the circuit as a function of frequency, measured between ports 1 and 2 in (a) using a network analyzer. As the QPCs are pinched off, separate resonances develop corresponding to reduced reflection from left and right tank circuits. Carrier frequencies
and
are chosen to match the two resonance frequencies. (c) and (d), QPC pinchoff measured simultaneously in reflectometry and DC conductance. (e) Reflectometry signal for the right sensor measured as a function of
and
, showing steps corresponding to charge transitions. Electron configurations for each gate setting are indicated.
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