Giant magnetoresistance and long-range antiferromagnetic interlayer exchange coupling in (Ga,Mn)As/GaAs:Be multilayers

Sunjae Chung, Sanghoon Lee, J.-H. Chung, Taehee Yoo, Hakjoon Lee, B. Kirby, X. Liu, and J. K. Furdyna
Phys. Rev. B 82, 054420 – Published 13 August 2010

Abstract

We report the observation of the giant magnetoresistance effect in semiconductor-based GaMnAs/GaAs:Be multilayers. Clear transitions between low-field-high-resistance and high-field-low-resistance states are observed in selected samples with Be-doped nonmagnetic spacers. These samples also show negative coercive fields in their magnetic hysteresis and antiferromagnetic (AFM) splittings in polarized neutron reflectivity. Our data indicate that the AFM interlayer exchange couplings in this system occur over much longer periods than predicted by current theories, strongly suggesting that the coupling in III–V semiconductor-based magnetic multilayers is significantly longer ranged than in metallic systems.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 7 July 2010

DOI:https://doi.org/10.1103/PhysRevB.82.054420

©2010 American Physical Society

Authors & Affiliations

Sunjae Chung1, Sanghoon Lee1,*, J.-H. Chung1, Taehee Yoo1, Hakjoon Lee1, B. Kirby2, X. Liu3, and J. K. Furdyna3

  • 1Department of Physics, Korea University, Seoul 136-701, Korea
  • 2NIST Center for Neutron Research, Gaithersburg, Maryland 20899, USA
  • 3Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA

  • *slee3@korea.ac.kr

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 82, Iss. 5 — 1 August 2010

Reuse & Permissions
Access Options

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×