Abstract
Cross-sectional scanning tunneling microscopy and spectroscopy (XSTM/S) were used to map out the band alignment across the complex oxide interface of -doped . By a controlled cross-sectional fracturing procedure, unit-cell high steps persist near the interface between the thin film and the substrate in the noncleavable perovskite materials. The abrupt changes in the mechanical and electronic properties were visualized directly by XSTM/S. Using changes in the density of states as probe by STM, the electronic band alignment across the heterointerface was mapped out providing an approach to directly measure the electronic properties at complex oxide interfaces.
- Received 12 May 2010
DOI:https://doi.org/10.1103/PhysRevB.82.041101
©2010 American Physical Society