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Edge structure of epitaxial graphene islands

Gregory M. Rutter, Nathan P. Guisinger, Jason N. Crain, Phillip N. First, and Joseph A. Stroscio
Phys. Rev. B 81, 245408 – Published 7 June 2010

Abstract

Graphene islands grown epitaxially on 6H-SiC(0001) were studied using scanning tunneling microscopy and spectroscopy. Under specific growth conditions, 10nm single-layer graphene islands are observed on top of the SiC buffer layer and align with the SiC(0001)-1×1 lattice directions. Atomic-resolution images show that the edges of the island closely follow an armchair-edge configuration.

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  • Received 15 October 2009

DOI:https://doi.org/10.1103/PhysRevB.81.245408

©2010 American Physical Society

Authors & Affiliations

Gregory M. Rutter1,2, Nathan P. Guisinger2,*, Jason N. Crain2, Phillip N. First1,†, and Joseph A. Stroscio2,†

  • 1School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
  • 2Center for Nanoscale Science and Technology, NIST, Gaithersburg, Maryland 20899, USA

  • *Present address: Argonne National Laboratory, Argonne, IL 60439-4806.
  • Authors to whom correspondence should be addressed: first@physics.gatech.edu; joseph.stroscio@nist.gov

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Vol. 81, Iss. 24 — 15 June 2010

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