Abstract
Graphene islands grown epitaxially on 6H-SiC(0001) were studied using scanning tunneling microscopy and spectroscopy. Under specific growth conditions, single-layer graphene islands are observed on top of the SiC buffer layer and align with the SiC(0001)- lattice directions. Atomic-resolution images show that the edges of the island closely follow an armchair-edge configuration.
- Received 15 October 2009
DOI:https://doi.org/10.1103/PhysRevB.81.245408
©2010 American Physical Society