Abstract
Gallium selenide is a III-VI chalcogenide material whose intrinsic cation vacancy ordering into one dimensional chains has been predicted to result in a one dimensional band at the valence-band maximum (VBM). The electronic structure of thin films on Si(001):As is studied with angle-resolved photoemission spectroscopy. The integrated density of states and the dispersion exhibit good agreement with that predicted by published density-functional theory results. Consistent with a one dimensional state, the electronic states at the VBM show no dispersion perpendicular to the vacancy chains. The Se-Ga bond length from extended x-ray absorption fine structure is . Low-energy electron-diffraction results indicate that the surface is characterized by nanometer-scale (111) facets, consistent with previous scanning tunneling microscopy results.
- Received 25 April 2010
DOI:https://doi.org/10.1103/PhysRevB.81.245313
©2010 American Physical Society