One-dimensional electronic states in Ga2Se3 on Si(001):As

T. C. Lovejoy, E. N. Yitamben, T. Ohta, S. C. Fain, Jr., F. S. Ohuchi, and M. A. Olmstead
Phys. Rev. B 81, 245313 – Published 15 June 2010

Abstract

Gallium selenide (Ga2Se3) is a III-VI chalcogenide material whose intrinsic cation vacancy ordering into one dimensional chains has been predicted to result in a one dimensional band at the valence-band maximum (VBM). The electronic structure of Ga2Se3 thin films on Si(001):As is studied with angle-resolved photoemission spectroscopy. The integrated density of states and the dispersion exhibit good agreement with that predicted by published density-functional theory results. Consistent with a one dimensional state, the electronic states at the VBM show no dispersion perpendicular to the vacancy chains. The Se-Ga bond length from extended x-ray absorption fine structure is 2.34Å. Low-energy electron-diffraction results indicate that the surface is characterized by nanometer-scale (111) facets, consistent with previous scanning tunneling microscopy results.

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  • Received 25 April 2010

DOI:https://doi.org/10.1103/PhysRevB.81.245313

©2010 American Physical Society

Authors & Affiliations

T. C. Lovejoy1,*, E. N. Yitamben1, T. Ohta2,†, S. C. Fain, Jr.1,‡, F. S. Ohuchi3, and M. A. Olmstead1

  • 1Department of Physics and Center for Nanotechnology, University of Washington, P.O. Box 351560, Seattle, Washington 98195, USA
  • 2Advanced Light Source, Berkeley, California 94720, USA
  • 3Department of Materials Science and Engineering, and Center for Nanotechnology, University of Washington, P.O. Box 352120, Seattle, Washington 98195, USA

  • *tlovejoy@uw.edu
  • Present address: Sandia National Laboratories, Albuquerque, NM 87185, USA.
  • Deceased.

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Vol. 81, Iss. 24 — 15 June 2010

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