Ion-beam modification of the magnetic properties of Ga1xMnxAs epilayers

E. H. C. P. Sinnecker, G. M. Penello, T. G. Rappoport, M. M. Sant’Anna, D. E. R. Souza, M. P. Pires, J. K. Furdyna, and X. Liu
Phys. Rev. B 81, 245203 – Published 7 June 2010

Abstract

We study the controlled introduction of defects in GaMnAs by irradiating the samples with energetic ion beams, which modify the magnetic properties of the diluted magnetic semiconductor. Our study focuses on the low-carrier-density regime, starting with as-grown GaMnAs films and decreasing even further the number of carriers, through a sequence of irradiation doses. We did a systematic study of magnetization as a function of temperature and of the irradiation ion dose. We also performed in situ room-temperature resistivity measurements as a function of the ion dose. We observe that both magnetic and transport properties of the samples can be experimentally manipulated by controlling the ion-beam parameters. For highly irradiated samples, the magnetic measurements indicate the formation of magnetic clusters together with a transition to an insulating state. The experimental data are compared with mean-field calculations for magnetization. The independent control of disorder and carrier density in the calculations allows further insight on the individual role of this two factors in the ion-beam-induced modification of GaMnAs.

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  • Received 2 September 2009

DOI:https://doi.org/10.1103/PhysRevB.81.245203

©2010 American Physical Society

Authors & Affiliations

E. H. C. P. Sinnecker, G. M. Penello, T. G. Rappoport, M. M. Sant’Anna, D. E. R. Souza, and M. P. Pires

  • Instituto de Física, Universidade Federal do Rio de Janeiro, Rio de Janeiro 21941-909, RJ, Brazil

J. K. Furdyna and X. Liu

  • Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA

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Issue

Vol. 81, Iss. 24 — 15 June 2010

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