Abstract
Using x-ray magnetic circular dichroism (XMCD), we determine the element-specific character and polarization of unoccupied states near the Fermi level in (Ga,Mn)As and (In,Ga,Mn)As thin films. The XMCD at the absorption edge consists of a single peak located on the low-energy side of the edge, which increases with the concentration of ferromagnetic Mn moments. The XMCD at the edge is more detailed and is strongly concentration dependent, which is interpreted as a signature of hole localization for low Mn doping. The results indicate a markedly different character of the polarized holes in low-doped insulating and high-doped metallic films, with a transfer of the hole orbital magnetic moment from Mn to As sites on crossing the metal-insulator transition.
- Received 23 April 2010
DOI:https://doi.org/10.1103/PhysRevB.81.235208
©2010 American Physical Society