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Element-resolved orbital polarization in (III,Mn)As ferromagnetic semiconductors from K-edge x-ray magnetic circular dichroism

P. Wadley, A. A. Freeman, K. W. Edmonds, G. van der Laan, J. S. Chauhan, R. P. Campion, A. W. Rushforth, B. L. Gallagher, C. T. Foxon, F. Wilhelm, A. G. Smekhova, and A. Rogalev
Phys. Rev. B 81, 235208 – Published 9 June 2010

Abstract

Using x-ray magnetic circular dichroism (XMCD), we determine the element-specific character and polarization of unoccupied states near the Fermi level in (Ga,Mn)As and (In,Ga,Mn)As thin films. The XMCD at the AsK absorption edge consists of a single peak located on the low-energy side of the edge, which increases with the concentration of ferromagnetic Mn moments. The XMCD at the MnK edge is more detailed and is strongly concentration dependent, which is interpreted as a signature of hole localization for low Mn doping. The results indicate a markedly different character of the polarized holes in low-doped insulating and high-doped metallic films, with a transfer of the hole orbital magnetic moment from Mn to As sites on crossing the metal-insulator transition.

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  • Received 23 April 2010

DOI:https://doi.org/10.1103/PhysRevB.81.235208

©2010 American Physical Society

Authors & Affiliations

P. Wadley1, A. A. Freeman1,2, K. W. Edmonds1, G. van der Laan2, J. S. Chauhan1, R. P. Campion1, A. W. Rushforth1, B. L. Gallagher1, C. T. Foxon1, F. Wilhelm3, A. G. Smekhova3, and A. Rogalev3

  • 1School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
  • 2Diamond Light Source, Chilton, Didcot OX11 0DE, United Kingdom
  • 3European Synchrotron Radiation Facility, F-38043 Grenoble Cedex 9, France

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Issue

Vol. 81, Iss. 23 — 15 June 2010

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