Graphene-based spin-pumping transistor

F. S. M. Guimarães, A. T. Costa, R. B. Muniz, and M. S. Ferreira
Phys. Rev. B 81, 233402 – Published 9 June 2010

Abstract

We demonstrate with a fully quantum-mechanical approach that graphene can function as gate-controllable transistors for pumped spin currents, i.e., a stream of angular momentum induced by the precession of adjacent magnetizations, which exists in the absence of net charge currents. Furthermore, we propose as a proof of concept how these spin currents can be modulated by an electrostatic gate. Because our proposal involves nanosized systems that function with very high speeds and in the absence of any applied bias, it is potentially useful for the development of transistors capable of combining large processing speeds, enhanced integration, and extremely low-power consumption.

  • Figure
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  • Received 5 March 2010

DOI:https://doi.org/10.1103/PhysRevB.81.233402

©2010 American Physical Society

Authors & Affiliations

F. S. M. Guimarães1, A. T. Costa1, R. B. Muniz1, and M. S. Ferreira2,*

  • 1Instituto de Física, Universidade Federal Fluminense, Niterói, Brazil
  • 2School of Physics, Trinity College Dublin, Dublin 2, Ireland

  • *ferreirm@tcd.ie

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Issue

Vol. 81, Iss. 23 — 15 June 2010

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