Electronic structure of indium selenide probed by magnetoabsorption spectroscopy under high pressure

Marius Millot, Jean-Marc Broto, Sylvie George, Jesús González, and Alfredo Segura
Phys. Rev. B 81, 205211 – Published 24 May 2010

Abstract

We report on an investigation of the peculiar electronic structure of the layered semiconductor InSe by magneto-optical experiments under high pressure up to 5 GPa. Magneto-absorption spectroscopy is performed under pulsed magnetic field up to 53 T using a specific setup. Excitonic magnetofingerprints and high-field oscillatory magnetoabsorption yield significant details on the band structure. In addition, the application of an external pressure unveils phenomena that confirm the specific kp model proposed for this compound on the basis of earlier measurements.

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  • Received 5 April 2010

DOI:https://doi.org/10.1103/PhysRevB.81.205211

©2010 American Physical Society

Authors & Affiliations

Marius Millot1,*, Jean-Marc Broto1, Sylvie George1, Jesús González2,3, and Alfredo Segura4

  • 1Laboratoire National des Champs Magnétiques Intenses (LNCMI), CNRS UPR 3228, Université de Toulouse, 143 Avenue de Rangueil, 31400 Toulouse, France
  • 2Malta Consolider Team, DCITIMAC, Universidad de Cantabria, Avenida Los Castros S/N, 39005 Santander, Cantabria, Spain
  • 3CES, Universidad de Los Andes, Mérida, Venezuela
  • 4MALTA Consolider Team, ICMUV, Universidad de Valencia, c/Dr. Moliner 50, 46100 Burjassot, Valencia, Spain

  • *Present address: Department of Earth and Planetary Science, University of California–Berkeley, Berkeley, California 94720, USA.

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Vol. 81, Iss. 20 — 15 May 2010

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