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Quantum oscillations and quantum Hall effect in epitaxial graphene

Johannes Jobst, Daniel Waldmann, Florian Speck, Roland Hirner, Duncan K. Maude, Thomas Seyller, and Heiko B. Weber
Phys. Rev. B 81, 195434 – Published 25 May 2010

Abstract

We investigate the transport properties of high-quality single-layer graphene, epitaxially grown on a 6H-SiC(0001) substrate. We have measured transport properties, in particular charge-carrier density, mobility, conductivity, and magnetoconductance of large samples as well as submicrometer-sized Hall bars which are entirely lying on atomically flat substrate terraces. The results display high mobilities, independent of sample size. The temperature dependence of the conductance indicates a rather strong coupling to the SiC substrate. An analysis of the Shubnikov-de Haas effect yields the Landau-level spectrum of single-layer graphene. When gated close to the Dirac point, the mobility increases substantially and the graphenelike quantum Hall effect occurs.

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  • Received 13 August 2009

DOI:https://doi.org/10.1103/PhysRevB.81.195434

©2010 American Physical Society

Authors & Affiliations

Johannes Jobst1, Daniel Waldmann1, Florian Speck2, Roland Hirner2, Duncan K. Maude3, Thomas Seyller2, and Heiko B. Weber1,*

  • 1Lehrstuhl für Angewandte Physik, Universität Erlangen-Nürnberg, 91056 Erlangen, Germany
  • 2Lehrstuhl für Technische Physik, Universität Erlangen-Nürnberg, 91056 Erlangen, Germany
  • 3Laboratoire des Champs Magnétiques Intenses, 25 Avenue des Martyrs, 38042 Grenoble, France

  • *heiko.weber@physik.uni-erlangen.de

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Issue

Vol. 81, Iss. 19 — 15 May 2010

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