Predicted band structures of III-V semiconductors in the wurtzite phase

A. De and Craig E. Pryor
Phys. Rev. B 81, 155210 – Published 20 April 2010; Errata Phys. Rev. B 81, 199901 (2010); Phys. Rev. B 84, 239907 (2011)

Abstract

While non-nitride III-V semiconductors typically have a zinc-blende structure, they may also form wurtzite crystals under pressure or when grown as nanowhiskers. This makes electronic structure calculation difficult since the band structures of wurtzite III-V semiconductors are poorly characterized. We have calculated the electronic band structure for nine III-V semiconductors in the wurtzite phase using transferable empirical pseudopotentials including spin-orbit coupling. We find that all the materials have direct gaps. Our results differ significantly from earlier ab initio calculations, and where experimental results are available (InP, InAs, and GaAs) our calculated band gaps are in good agreement. We tabulate energies, effective masses, and linear and cubic Dresselhaus zero-field spin-splitting coefficients for the zone-center states. The large zero-field spin-splitting coefficients we find may facilitate the development of spin-based devices.

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  • Received 6 August 2009
  • Corrected 5 May 2010

DOI:https://doi.org/10.1103/PhysRevB.81.155210

©2010 American Physical Society

Corrections

5 May 2010

Errata

Authors & Affiliations

A. De and Craig E. Pryor

  • Department of Physics and Astronomy and Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242, USA

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Issue

Vol. 81, Iss. 15 — 15 April 2010

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