Migration of gold atoms in graphene ribbons: Role of the edges

Wei Zhang, Litao Sun, Zijian Xu, Arkady V. Krasheninnikov, Ping Huai, Zhiyuan Zhu, and F. Banhart
Phys. Rev. B 81, 125425 – Published 22 March 2010

Abstract

The migration of gold atoms attached to single vacancies near the edges of graphene ribbons is studied using density-functional theory calculations. The stable position for a single gold atom is found to be on top of a vacancy, as in an infinite graphene sheet. An energy of 5 eV is needed for the Au atom to move through the vacancy to the other side of the sheet, but the Au atom can migrate in lateral direction together with the vacancy, with a migration barrier of about 2.2 eV. The sites near the edges of the graphene layer are energetically more favorable for gold-atom-vacancy pairs than sites in the middle of extended graphene layers. The migration barriers for different pathways show that it is easier for the gold atom to move toward the edge where it can be captured. When the gold atom reaches the edge, it can migrate along the edge with an energy barrier of only 1.4 eV. Our results explain recent experimental observations [Y. Gan et al., Small 4, 587 (2008)] and provide information on the dynamics of metal atoms on substitutional sites in graphene as well as on their agglomeration at defects and at edges of graphene ribbons.

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  • Received 12 October 2009

DOI:https://doi.org/10.1103/PhysRevB.81.125425

©2010 American Physical Society

Authors & Affiliations

Wei Zhang1, Litao Sun2,*, Zijian Xu1, Arkady V. Krasheninnikov3,4, Ping Huai1, Zhiyuan Zhu1, and F. Banhart5

  • 1Shanghai Institute of Applied Physics, Chinese Academy of Sciences, 201800 Shanghai, China
  • 2SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, and State Key Laboratory of Bioelectronics, Southeast University, 210096 Nanjing, China
  • 3Division of Materials Physics, University of Helsinki, FI-00014 Helsinki, Finland
  • 4Laboratory of Physics, Helsinki University of Technology, FI-02015 Helsinki, Finland
  • 5Institut de Physique et Chimie des Matériaux, UMR 7504, University of Strasbourg, 67034 Strasbourg, France

  • *Corresponding author; slt@seu.edu.cn

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Vol. 81, Iss. 12 — 15 March 2010

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