Single-electron transistors studied by microwave and far-infrared absorption: Theoretical results and experimental proposal

Ioan Bâldea and Horst Köppel
Phys. Rev. B 81, 125322 – Published 16 March 2010
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Abstract

We present theoretical results on microwave and far-infrared (FIR) absorption of single-electron transistors obtained within exact numerical diagonalization for finite clusters. They show that both the microwave and the FIR spectra consist of two maxima, whose origin can be understood physically. Our results on microwave absorption provide a physically intuitive qualitative interpretation of the Kondo splitting observed by Kogan et al. [Science 304, 1293 (2004)]. The present results on the FIR absorption supplement and provide a physical insight into previous results obtained by means of the numerical renormalization group. Based on our theoretical results, we propose to conduct FIR experiments to determine the charging energy and other relevant parameters.

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  • Received 2 October 2009

DOI:https://doi.org/10.1103/PhysRevB.81.125322

©2010 American Physical Society

Authors & Affiliations

Ioan Bâldea* and Horst Köppel

  • Theoretische Chemie, Physikalisch-Chemisches Institut, Universität Heidelberg, Im Neuenheimer Feld 229, D-69120 Heidelberg, Germany

  • *Also at National Institute for Lasers, Plasma, and Radiation Physics, ISS, POB MG-23, RO 077125 Bucharest, Romania; ioan.baldea@pci.uni-heidelberg.de

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Issue

Vol. 81, Iss. 12 — 15 March 2010

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